Articles from Kioxia Corporation

Kioxia Corporation, a world leader in memory solutions, today announced that it has received the IEEE Corporate Innovation Award from the Institute of Electrical & Electronics Engineers (IEEE), the world’s largest technical professional organization dedicated to advancing technology for the benefit of humanity. This award recognizes Kioxia's outstanding contribution in the field of electrical and electronics engineering through its BiCS FLASH™ technology, a low-cost, high-capacity 3D flash memory innovation. The award ceremony was held on April 24 in Tokyo.

Kioxia Corporation has been named a Clarivate Top 100 Global Innovators 2025, an award given to the most innovative global companies by Clarivate Plc. This is the fourth time Kioxia has received this prestigious award in recognition of its accomplishment in intellectual property.

Kioxia Corporation and Sandisk Corporation have pioneered a state-of-the-art 3D flash memory technology, setting the industry benchmark with a 4.8Gb/s NAND interface speed, superior power efficiency, and heightened density.

Kioxia Corporation, a world leader in memory solutions, today announced the development of OCTRAM (Oxide-Semiconductor Channel Transistor DRAM), a new type of 4F2 DRAM, comprised of an oxide-semiconductor transistor that has a high ON current, and an ultra-low OFF current, simultaneously. This technology is expected to realize a low power DRAM by bringing out the ultra-low leakage property of the InGaZnO*1 transistor. This was first announced at the IEEE International Electron Devices Meeting (IEDM) held in San Francisco, CA on December 9, 2024. This achievement was jointly developed by Nanya Technology and Kioxia Corporation. This technology has the potential to lower power consumption in a wide range of applications, including AI and post-5G communication systems, and IoT products.

Kioxia Corporation, a world leader in memory solutions, today announced that it has been adopted by Japan's national research and development agency, New Energy and Industrial Technology Development Organization (NEDO), for its groundbreaking proposal on the Development of Manufacturing Technology for Innovative Memory to enhance the post-5G information and communication system infrastructure.

Kioxia Corporation, a world leader in memory solutions, today announced that the company’s research papers have been accepted for presentation at IEEE International Electron Devices Meeting (IEDM) 2024, a prestigious international conference to be held in San Francisco, USA, from December 7th to 11th.

Kioxia Corporation, a world leader in memory solutions, and MoDeCH Inc., a leading developer of modeling and design technology, announced the development of an industry first probing system for high-frequency characteristic measurement for three-dimensional (3D) objects up to 110 GHz at The European Microwave Conference (EuMC) on September 26(1).

Kioxia Corporation, a world leader in memory solutions, today announced that the building construction of Fab2 (K2) of its industry-leading Kitakami Plant was completed in July. K2 is the second flash memory manufacturing facility at the Kitakami Plant in the Iwate Prefecture of Japan. As demand is recovering, the company will gradually make capital investments while closely monitoring flash memory market trends. Kioxia plans to start operation at K2 in the fall of Calendar Year 2025.

Kioxia Corporation, a world leader in memory solutions, today announced that it started sample shipments(1) of 2Tb (tera bit) Quad-Level-Cell (QLC) memory devices with its eighth-generation BiCS FLASHTM 3D flash memory technology. This 2Tb QLC device has the highest capacity in the industry(2), elevating storage devices to a new capacity point that will drive growth in multiple application segments including AI.

Kioxia Corporation has been named a Clarivate Top 100 Global Innovators™ 2024, an award given to the most innovative global companies by Clarivate Plc. This is the third time Kioxia has received this prestigious award in recognition of its accomplishment in intellectual property.

Kioxia Corporation today commenced operation of two new R&D facilities — the Flagship Building at the Yokohama Technology Campus and the Shin-Koyasu Technology Front — strengthening the company’s research and development capabilities in flash memory and solid-state drives (SSDs). Going forward, other R&D functions in Kanagawa Prefecture will be relocated to these new R&D hubs to improve research efficiency and promote further advancement in technological innovation.

Kioxia Corporation, a world leader in memory solutions, announced today that its employees received the Award for Science and Technology from The Commendation for Science and Technology by the Ministry of Education, Culture, Sports, Science and Technology for their Invention of high-density three-dimensional flash memory device and manufacturing method thereof, which greatly increases memory capacity and decreases manufacturing costs.

Demonstrating continued innovation, Kioxia Corporation and Western Digital Corp. (NASDAQ: WDC) today announced details of their newest 3D flash memory technology. Applying advanced scaling and wafer bonding technologies, the 3D flash memory delivers exceptional capacity, performance and reliability at a compelling cost, which makes it ideal for meeting the needs of exponential data growth across a broad range of market segments.

Kioxia Corporation has been named a Clarivate Top 100 Global Innovators™ 2023, an award given to the most innovative global companies by Clarivate Plc. This is the second time Kioxia has received this prestigious award in recognition of its accomplishment in intellectual property.

Kioxia Group is increasing the usage of renewable energy by installing large-scale solar power generation systems for the first time at its Kitakami Plant and Yokkaichi Plant. Installed on the rooftop of flash memory fabrication facilities, the new solar power systems will be the largest of their kind at any semiconductor plant in Japan.1 With a total generating capacity of about 7.5 megawatts (MW), the new solar power systems are expected to generate about 7,600 megawatt hours (MWh) of electricity annually for Kioxia and reduce carbon dioxide emissions by about 3,200 tons per year. With the new solar power systems, we will accelerate our efforts to address climate change, one of the key objectives of our management strategy.

Kioxia Corporation, the world leader in memory solutions, has developed an image classification system based on Memory-Centric AI, an AI technology that utilizes high-capacity storage. The system classifies images using a neural network that refers to knowledge stored in external high-capacity storage; this avoids "catastrophic forgetting," one of the major challenges of neural networks, and allows knowledge to be added or updated without the loss of current knowledge. This technology was presented on October 25 at the oral session of European Conference on Computer Vision 2022 (ECCV 2022) in Tel Aviv, one of the top conferences in the field of computer vision[1].

Kioxia Corporation and Western Digital Corporation (NASDAQ: WDC) today celebrated the opening of the state-of-the-art semiconductor fabrication facility, Fab7, at the Yokkaichi Plant in Mie Prefecture, Japan. Production capacity at Fab7 will ramp up in stages over time, in line with market trends.

Kioxia Corporation, the world leader in memory solutions, announced the development of a false-lock-aware locking technique for 56-Gbps PAM4 transceivers at ESSCIRC 2022 (IEEE European Solid-State Circuits Conference 2022) on September 22.

Kioxia Corporation, the world leader in memory solutions, today announced the launch of the second generation of XL-FLASH™, a Storage Class Memory (SCM) solution based on its BiCS FLASH™ 3D flash memory technology, which significantly reduces bit cost while providing high performance and low latency. Product sample shipments are scheduled to start in November this year, with volume production expected to begin in 2023.

Kioxia Corporation, the world leader in memory solutions, announced today it has been awarded the 2022 Invention Prize by the National Commendation for Invention for its Invention of Optimization of Read Method for Multi-level Flash Memory (patent no. 4892307). Dating back to 1919, the National Commendation for Invention is a Japanese program dedicated to promoting science, technology and recognizing industries with outstanding inventions, ideas and designs. This is the third consecutive year that Kioxia has received an award from this prestigious program.

Kioxia Corporation today announced it is making a donation of 100 million yen to support humanitarian assistance and relief for those affected by the ongoing conflict in Ukraine. The donation will be made via the UNHCR, the UN Refugee Agency. Kioxia Group sincerely hopes that the conflict can be resolved as soon as possible and that peace and security will be restored in Ukraine.

Kioxia Corporation, the world leader in memory solutions, today held a groundbreaking ceremony for its state-of-the-art semiconductor fabrication facility (Fab2) at its Kitakami Plant in Iwate Prefecture, Japan. Utilizing AI-based cutting-edge manufacturing, the new facility will contribute towards possible expansion of production of its proprietary 3D flash memory BiCS FLASHTM at the Kitakami Plant. Construction of the Fab2 facility is scheduled to be completed in 2023.

Kioxia Corporation, the world leader in memory solutions, today announced it will begin construction of a state-of-the-art new fabrication facility (Fab2) at its Kitakami Plant in Iwate Prefecture, Japan for the possible expansion of production of its proprietary 3D Flash memory BiCS FLASHTM. Construction of the facility is scheduled to commence in April 2022 and is expected to be completed in 2023.

Kioxia Corporation, a world leader in memory solutions, announced today that it was awarded the 2020 Field Innovation Award Silver Prize by the Japanese Society for Artificial Intelligence (JSAI) for its TEZUKA 2020 project. TEZUKA 2020 brought AI and humans together in collaboration to create a new manga, or comic book, in the nearly identical artistic style of manga legend Osamu Tezuka.

Kioxia Corporation, a world leader in memory solutions, announced today that it was awarded the 2021 Invention Prize from the National Commendation for Invention of semiconductor flash memory extension-of-life-span technology (patent no. 4461170). Dating back to 1919, the National Commendation for Invention is a Japanese program dedicated to promoting science, technology and industry that recognizes outstanding inventions, ideas and designs.

Kioxia Corporation, the world leader in memory solutions, today announced a 20 billion yen investment to expand its Technology Development Building at its Yokohama Technology Campus and to establish its new Shin-Koyasu Advanced Research Center. The new facilities are expected to be operational by 2023 and will strengthen Kioxia’s research and technology development by bringing together its R&D sites in Kanagawa Prefecture to improve efficiency and to create a more conducive working environment for innovation through collaboration.